impurity semiconductor
英 [ɪmˈpjʊərəti ˌsemikənˈdʌktə(r)]
美 [ɪmˈpjʊrəti ˈsemikəndʌktər]
网络 杂质半导体; 半导体
双语例句
- Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots
纤锌矿氮化物半导体椭球形量子点杂质态 - When the electrical characteristics are dictated by impurity atoms, the semiconductor is said to be extrinsic semiconductors.
如果半导体的电学性质归因于其中的杂质原子，那么它将被称为杂质半导体。 - Then we subject the semiconductor to impurity doping, which turns it into either a p-type or an n-type semiconductor.
然后我们使半导体经过渗杂，以将其转变成p型或n型半导体。 - Directly Plotting Impurity Profile of Semiconductor
半导体杂质分布曲线的直接描绘 - A variational method is adopted to investigate the ground state binding energy of an electron bound to a donor impurity near the interface of a single semiconductor heterojunction by considering the modification of the dielectric constant within a continuous dielectric theory.
采用连续电介质理论计入对材料介电常数的修正，利用变分法讨论半导体单异质结中界面附近的单电子束缚于施主杂质的基态结合能。 - Scaling of Hydrogenic Impurity Binding Energy and Virial Theorem in Semiconductor Quantum Wells and Wires
半导体量子阱和量子线中杂质束缚能的度规法则与维里定理 - Semiconductor material is removed layer by layer with anode oxidation method. Resistivity and relevant impurity concentration in every layer is measured with four point probe method. The impurity distribution of semiconductor material N ( x) is obtained.
利用阳极氧化法对半导体材料逐次去层，采用四探针法测量其每层的电阻率及相应杂质浓度，可得出半导体材料的杂质分布N（x）。 - Localization Effect of Frequency of Impurity Local Modes in Semiconductor
半导体中轻杂质局域振动模的局域性效应 - Corundum dopped with impurity not only is cherished because of it's beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor.
含有少量杂质的刚玉晶体（α-Al2O3）不仅由于其色泽艳丽成为人们珍爱的名贵宝石，而且由于它具有的优异性能，被广泛应用于电工、机械、激光器，光学器件和半导体衬底材料。 - A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a triangular potential and the screened Coulombic impurity potential. The screening effect is considered with the random phase approximation.
对半导体单异质结系统，引入三角势近似异质结势，考虑电子对杂质库仑势的屏蔽影响，利用变分法讨论在界面附近束缚于正施主杂质的单电子基态能量。 - The Effect of Deep Level Impurity on the Nonlinear Performances of Photoconductive Semiconductor Switches
深能级杂质对光导半导体开关非线性特性的影响 - A study on the role of impact ionization of deep level impurity in nonlinear photoconductive semiconductor switches
深能级杂质碰撞电离在非线性光导开关中的作用研究 - The Effect of Impurity Potential Varying Harmonically in Time on the Transport Property of the Semiconductor Superlattice
含时谐振缺陷势对半导体超晶格输运特性的影响 - The other absorption peak is attributed to the transition of bound electrons at the impurity energy level of the BaO semiconductor matrix, and the presence of such an impurity energy level is related to the negative ion vacancies caused by the excess barium in the BaO crystal.
而位于近红外光区的次吸收峰则是由BaO半导体基质中杂质能级的光吸收引起的。杂质能级的产生与超额Ba在BaO晶体中造成的氧缺位有关。 - Impurity Effect on Density of States of Metal Semiconductor Interface
杂质对金属-半导体界面电子态的影响 - Several results of the nondestructive inspection of the impurity precipitation in semiconductor
对半导体杂质沉淀无损检测的若干结果 - Two conduction mechanisms, impurity conduction and intrinsic conduction, are found in semiconductor.
半导体内有两种导电机制：杂质导电和本征导电。 - Chaos in the Anisotropic Donor Impurity in a Semiconductor Structures
半导体结构束缚下各向异性施主杂质中的混沌 - Boron is the primary impurity in semiconductor material, and accurately controling impurity density of section is one of the key questions in semiconductor-technics.
硼是半导体材料中最主要的杂质，而精确控制杂质浓度剖面是半导体工艺的关键问题之一。 - The effect of concentration of impurity on lattice constants and magnetic configurations of diluted magnetic semiconductor ( Ga_ ( 1-x) Fe_x) As
掺杂浓度对稀磁性半导体（Ga，Fe）As的晶格常数及磁性质的影响 - The calculated results agree well with the experimental data. The impurity level calculation formula which established based on electronegativity can be used to provide theoretical guidance in the search of proper impurity atoms for semiconductor doping.
计算结果与实验值符合得较好，这一基于电负性的杂质能级计算公式可以为寻找合适的杂质用于半导体掺杂提供理论上的指导。 - The band structure reveals the form of impurity levels due to the substitutional impurity in semiconductor matrix, the conductivity is higher than that of the non-doped model.
掺杂模型的能带结构显示，由于在半导体母体中进行杂质原子取代而形成了杂质能级，电导率都高于未掺杂的。 - Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。